Efficient light emitting diodes with Teflon buffer layer

被引:30
作者
Qiu, Y [1 ]
Gao, YD [1 ]
Wang, LD [1 ]
Zhang, DQ [1 ]
机构
[1] Tsing Hua Univ, Dept Chem, Organ Optoelect Lab, Beijing 100084, Peoples R China
基金
中国国家自然科学基金;
关键词
Teflon; buffer layer; light emitting diodes;
D O I
10.1016/S0379-6779(02)00121-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The polytetrafluoroethylene (Teflon) was utilized as buffer layer to improve the performance of organic light emitting diodes (OLEDs). In the ITO/Teflon/N,N'-diphenyl-N,N'-(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD)/tris(8-hydroxy-quinoline) aluminum (Alq(3))/Ca/Ag device, the Teflon film helped to enhance the hole tunneling injection and effectively impede indium diffusion from the ITO electrode. Compared with the devices without Teflon, the turn-on voltage was lowered by 1.5 V due to the introduction of Teflon buffer, and the optimized devices exhibited a luminous efficiency double that of the devices without Teflon layer, and the device lifetime proved to be dramatically increased. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:235 / 237
页数:3
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