Mechanism and activation energy barrier for H abstraction by H(D) from a-Si:H surfaces

被引：26

作者：

Agarwal, S

Sriraman, S

Takano, A

van de Sanden, MCM

Aydil, ES

Maroudas, D ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Chem Engn, Santa Barbara, CA 93106 USA

[2] Fuji Elect Corp Res & Dev Ltd, Yokohama, Kanagawa 2400194, Japan

[3] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

来源：

SURFACE SCIENCE | 2002年 / 515卷 / 01期

关键词：

amorphous surfaces; infrared absorption spectroscopy; hydrogen atom; molecular dynamics; plasma processing; semiconductor semiconductor thin film structures; silicon; surface chemical reaction;

D O I：

10.1016/S0039-6028(02)01879-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Hydrogen atoms are abstracted from the surface of hydrogenated amorphous silicon (a-Si:H) films by impinging H(D) atoms through an Eley-Rideal mechanism that is characterized by a zero activation energy barrier. This has been revealed by systematic analysis of the interactions of H(D) atoms with a-Si:H films during exposure to an H-2(D-2) plasma using synergistically molecular-dynamics simulations and attenuated total reflection Fourier transform infrared spectroscopy combined with spectroscopic ellipsometry. Understanding such interactions is of utmost importance in optimizing the plasma deposition of silicon thin films. (C) 2002 Elsevier Science B.V. All rights reserved.

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页码：L469 / L474

页数：6

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