ADSORPTION, ABSTRACTION, AND PAIRING OF ATOMIC-HYDROGEN ON SI(100)-(2 X-1)

被引:131
作者
WIDDRA, W
YI, SI
MABOUDIAN, R
BRIGGS, GAD
WEINBERG, WH
机构
[1] UNIV CALIF SANTA BARBARA,CTR QUANTIZED ELECTR STRUCT,SANTA BARBARA,CA 93106
[2] TECH UNIV MUNICH,DEPT PHYS E20,D-85747 GARCHING,GERMANY
[3] UNIV CALIF BERKELEY,DEPT CHEM ENGN,BERKELEY,CA 94720
[4] UNIV OXFORD,DEPT MAT,OXFORD OX1 3PH,ENGLAND
关键词
D O I
10.1103/PhysRevLett.74.2074
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Using thermal desorption mass spectrometry, we have shown unambiguously that the adsorption of atomic hydrogen on Si(100)- 2×1 leads to hydrogen pairing on silicon dimers at surface temperatures as low as 150 K and coverages as low as 0.2 monolayer. A detailed study of the adsorption kinetics shows a high probability of an abstraction reaction together with a coverage-dependent adsorption probability which is greater than expected for Langmuirian adsorption. These results, together with the known saturation coverage, are unified within the context of a hot-precursor mechanism for the adsorption of atomic hydrogen. © 1995 The American Physical Society.
引用
收藏
页码:2074 / 2077
页数:4
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