Highly efficient and stable inverted bottom-emission organic light emitting devices

被引：22

作者：

Chu, Ta-Ya ^{[1
]}

Chen, Jenn-Fang

Chen, Szu-Yi

Chen, Chao-Jung

Chen, Chin H.

机构：

[1] Natl Chiao Tung Univ, Inst Electrophys, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Display Inst, Hsinchu 300, Taiwan

[3] Natl Chiao Tung Univ, Microelect & Informat Syst Res Ctr, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 05期

关键词：

D O I：

10.1063/1.2268923

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report the development of highly efficient and stable C545T doped green fluorescent Alq(3) inverted bottom-emission organic light emitting device (OLED), with a device configuration of ITO/Mg/Cs2O:Bphen/Alq(3)/C545T:Alq(3)/NPB/WO3/Al, that achieved a maximum current efficiency of 23.7 cd/A and a power efficiency of 12.4 lm/W which are two times better than those of the conventional OLED. At a brightness level of 100 cd/m(2), the device required driving current density only as low as 0.5 mA/cm(2) at a driving voltage of only 5.0 V and its half-lifetime T-1/2 in excess of 104 000 h. (c) 2006 American Institute of Physics.

引用

页数：3

共 20 条

[1] An effective cathode structure for inverted top-emitting organic light-emitting devices [J].

Chen, CW ;

Lin, CL ;

Wu, CC .

APPLIED PHYSICS LETTERS, 2004, 85 (13) :2469-2471

[2] Enhancement of electron injection in inverted top-emitting organic light-emitting diodes using an insulating magnesium oxide buffer layer [J].

Choi, HW ;

Kim, SY ;

Kim, WK ;

Lee, JL .

APPLIED PHYSICS LETTERS, 2005, 87 (08)

[3] Ultrathin electron injection layer on indium-tin oxide bottom cathode for highly efficient inverted organic. light-emitting diodes [J].

Chu, Ta-Ya ;

Chen, Szu-Yi ;

Chen, Jenn-Fang ;

Chen, Chin H. .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (6A) :4948-4950

[4]

CHU TY, IN PRESS APPL PHYS L, P92103

[5] Inverted hybrid organic light-emitting device with polyethylene dioxythiophene-polystyrene sulfonate as an anode buffer layer [J].

Dobbertin, T ;

Werner, O ;

Meyer, J ;

Kammoun, A ;

Schneider, D ;

Riedl, T ;

Becker, E ;

Johannes, HH ;

Kowalsky, W .

APPLIED PHYSICS LETTERS, 2003, 83 (24) :5071-5073

[6] High-efficiency inverted top-emitting polymer light-emitting diodes [J].

Hou, LT ;

Huang, F ;

Zeng, WJ ;

Peng, JB ;

Cao, Y .

APPLIED PHYSICS LETTERS, 2005, 87 (15) :1-3

[7]

Kho S, 2005, J KOREAN PHYS SOC, V46, P1224

[8] Effects of N2 plasma treatment of the Al bottom cathode on the characteristics of top-emission-inverted organic-light-emitting diodes [J].

Kho, S ;

Sohn, S ;

Jung, DG .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (5B) :L552-L555

[9]

Kowalsky W., 2001, Proceedings of the SPIE - The International Society for Optical Engineering, V4105, P194, DOI 10.1117/12.416894

[10] Enhanced performance of organic light emitting device by insertion of conducting/insulating WO3 anodic buffer layer [J].

Li, JZ ;

Yahiro, M ;

Ishida, K ;

Yamada, H ;

Matsushige, K .

SYNTHETIC METALS, 2005, 151 (02) :141-146

← 1 2 →