Effect of the growth temperature on ZnO thin films grown by plasma enhanced chemical vapor deposition

被引:30
作者
Li, BS
Liu, YC
Zhi, ZZ
Shen, DZ
Lu, YM
Zhang, JY
Kong, XG
Fan, XW
机构
[1] Chinese Acad Sci, Open Lab Excited State Proc, Changchun 130021, Peoples R China
[2] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Changchun 130021, Peoples R China
基金
中国国家自然科学基金;
关键词
zinc oxide; plasma processing and deposition; luminescence; organometallic vapor deposition;
D O I
10.1016/S0040-6090(02)00491-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A preferred oriented (0 0 2) ZnO thin films have been grown on Si (10 0) substrate via plasma enhanced chemical vapor deposition using diethylzinc and carbon dioxide as reactant sources. In this paper, the dependence of the quality of the ZnO thin film on the growth temperature is studied. A polycrystalline ZnO thin film with a c-axis-orientated wurtize structure is obtained at a growth temperature of 23 degreesC. X-ray diffraction shows that the full width at half maximum (FWHM) of (0 0 2) ZnO, located at 34.42degrees, is approximately 0.26degrees. A pronounced exciton absorption peak is observed in the absorption spectrum. The photoluminescence (PL) spectra show a strong ultraviolet (UV) band emission approximately 3.26 eV with a weak emission related to deep-level defects, implying that the ZnO thin films are nearly stoichiometric. The FWHMs of the PL spectra become narrower with increasing growth temperature. The origin of the UV band is from free exciton recombination, testified by the temperature dependent PL spectra in the range of 81-581 K (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:170 / 174
页数:5
相关论文
共 26 条
[1]   High temperature excitonic stimulated emission from ZnO epitaxial layers [J].
Bagnall, DM ;
Chen, YF ;
Zhu, Z ;
Yao, T ;
Shen, MY ;
Goto, T .
APPLIED PHYSICS LETTERS, 1998, 73 (08) :1038-1040
[2]   LUMINESCENCE OF HETEROEPITAXIAL ZINC-OXIDE [J].
BETHKE, S ;
PAN, H ;
WESSELS, BW .
APPLIED PHYSICS LETTERS, 1988, 52 (02) :138-140
[3]   Growth of ZnO single crystal thin films on c-plane (0 0 0 1) sapphire by plasma enhanced molecular beam epitaxy [J].
Chen, YF ;
Bagnall, DM ;
Zhu, ZQ ;
Sekiuchi, T ;
Park, KT ;
Hiraga, K ;
Yao, T ;
Koyama, S ;
Shen, MY ;
Goto, T .
JOURNAL OF CRYSTAL GROWTH, 1997, 181 (1-2) :165-169
[4]   Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire: Growth and characterization [J].
Chen, YF ;
Bagnall, DM ;
Koh, HJ ;
Park, KT ;
Hiraga, K ;
Zhu, ZQ ;
Yao, T .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) :3912-3918
[5]   The effect of Zn buffer layer on growth and luminescence of ZnO films deposited on Si substrates [J].
Fu, ZX ;
Lin, BX ;
Liao, GH ;
Wu, ZQ .
JOURNAL OF CRYSTAL GROWTH, 1998, 193 (03) :316-321
[6]   HIGHLY ORIENTED ZINC-OXIDE FILMS GROWN BY THE OXIDATION OF DIETHYLZINC [J].
GHANDHI, SK ;
FIELD, RJ ;
SHEALY, JR .
APPLIED PHYSICS LETTERS, 1980, 37 (05) :449-451
[7]   HETEROEPITAXIAL GROWTH OF ZNO FILMS ON DIAMOND (111) PLANE BY MAGNETRON SPUTTERING [J].
HACHIGO, A ;
NAKAHATA, H ;
HIGAKI, K ;
FUJII, S ;
SHIKATA, S .
APPLIED PHYSICS LETTERS, 1994, 65 (20) :2556-2558
[8]   Preparation of ZnO films by atmospheric pressure chemical-vapor deposition using zinc acetylacetonate and ozone [J].
Haga, K ;
Katahira, F ;
Watanabe, H .
THIN SOLID FILMS, 1999, 343 :145-147
[9]   In situ measurement of mechanical stress in polycrystalline zinc-oxide thin films prepared by magnetron sputtering [J].
Hinze, J ;
Ellmer, K .
JOURNAL OF APPLIED PHYSICS, 2000, 88 (05) :2443-2450
[10]   ZnO growth on Si by radical source MBE [J].
Iwata, K ;
Fons, P ;
Niki, S ;
Yamada, A ;
Matsubara, K ;
Nakahara, K ;
Tanabe, T ;
Takasu, H .
JOURNAL OF CRYSTAL GROWTH, 2000, 214 :50-54