Characterization of ZnO films prepared by reactive sputtering at different oxygen pressures

被引:16
作者
Amrani, B [1 ]
Hamzaoui, S [1 ]
机构
[1] USTO, Scanning Electron Microscope & Mat Sci Lab, Oran, Algeria
关键词
ZnO; sputtering; preferential orientation;
D O I
10.1016/j.cattod.2003.12.014
中图分类号
O69 [应用化学];
学科分类号
081704 ;
摘要
The piezoelectric qualities of ZnO films are characterized by their high resistivity and polycrystalline structure which is preferentially textured in perpendicular to the substrate, both of them were studied as a function of sputtering parameters. This paper deals with the formation of ZnO thin films successfully deposited onto glass substrate by sputtering. The films feature plane (002) preferential orientation. The effects of the sputtering pressure, sputtering power and sputtering in an O-2 + Ar gas mixture on the preferential orientation of the ZnO films are studied. The results show that a lower sputtering pressure is conducive to the formation of the (002) plane. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:331 / 335
页数:5
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