Correlation between dislocation density and the macroscopic properties of GaN grown by metalorganic vapor phase epitaxy

被引：15

作者：

Watanabe, A

Takahashi, H

Tanaka, T

Ota, H

Chikuma, K

Amano, H

Kashima, T

Nakamura, R

Akasaki, I

机构：

[1] Pioneer Corp, Corp Res & Dev Labs, Tsurugashima, Saitama 3502288, Japan

[2] Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 4688502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 10B期

关键词：

MOVPE; GaN; dislocation density; photo-electro-chemical etching; mobility; photoluminescence;

D O I：

10.1143/JJAP.38.L1159

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The correlation between the dislocation density and the electrical and optical properties of lightly Si-doped GaN films grown by metalorganic vapor phase epitaxy was investigated. Photo-electro-chemical (PEC) etching, developed by Youtsey et al. [Appl. Phys. Lett. 73 (1998) 797], was applied to determine the dislocation density. We modified the PEC etching technique by introducing an additional pulsed sequence. Clear correlation was observed between the dislocation density and the Hall mobility and room-temperature photoluminescence intensity. The influence of the reactor pressure on the dislocation density is also discussed.

引用

收藏

页码：L1159 / L1162

页数：4

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