Semiconducting properties of cup-stacked carbon nanotubes

被引：47

作者：

Liu, Qingfeng ^{[1
]}

Ren, Wencai ^{[1
]}

Chen, Zhi-Gang ^{[1
]}

Yin, Lichang ^{[1
]}

Li, Feng ^{[1
]}

Cong, Hongtao ^{[1
]}

Cheng, Hui-Ming ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China

来源：

CARBON | 2009年 / 47卷 / 03期

基金：

美国国家科学基金会;

关键词：

NANOPARTICLES; TRANSPARENT; FABRICATION; PYROLYSIS; DIAMETER; FIELD; STEP;

D O I：

10.1016/j.carbon.2008.11.005

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The current-voltage characteristics of individual cup-stacked carbon nanotubes (CSCNTs) were investigated in situ inside the transmission electron microscope. Different from other quasi-ID carbon structures such as multi-walled carbon nanotubes, carbon nanofibers or graphitic fibers that normally behave as a metallic conductor of electrons, individual CSCNTs were found to exhibit unexpectedly semiconducting behaviors due to the special stacking microstructure of graphene layers. The band gap of the CSCNTs was obtained with the value of about 0.44 eV, in contrast to the zero-gap semiconducting quasi-2D graphene. These findings provide new information about the effect of the stacking graphene layers on their electronic properties, and will widen the usefulness of such stacking structure for the application in nanoelectronics. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：731 / 736

页数：6

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