Energy distributions of positive and negative ions during magnetron sputtering of an Al target in Ar/O2 mixtures

被引:48
作者
Andersson, Jon M. [1 ]
Wallin, E.
Munger, E. P.
Helmersson, U.
机构
[1] Linkoping Univ, IFM Mat Phys, SE-58183 Linkoping, Sweden
[2] Linkoping Univ, IFM Theory & Modelling, SE-58183 Linkoping, Sweden
关键词
D O I
10.1063/1.2219163
中图分类号
O59 [应用物理学];
学科分类号
摘要
The ion flux obtained during reactive magnetron sputtering of an Al target in Ar/O-2 gas mixtures was studied by energy-resolved mass spectrometry, as a function of the total and O-2 partial pressures. The positive ions of film-forming species exhibited bimodal energy distributions, both for direct current and radio frequency discharges, with the higher energy ions most likely originating from sputtered neutrals. For the negative oxygen ions a high-energy peak was observed, corresponding to ions formed at the target surface and accelerated towards the substrate over the sheath potential. As the total pressure was increased the high-energy peaks diminished due to gas-phase scattering. Based on these results, the role of energetic bombardment for the phase constituent of alumina thin films are discussed. (c) 2006 American Institute of Physics.
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页数:5
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共 29 条
[1]   Phase control of Al2O3 thin films grown at low temperatures [J].
Andersson, J. M. ;
Wallin, E. ;
Helmersson, U. ;
Kreissig, U. ;
Munger, E. P. .
THIN SOLID FILMS, 2006, 513 (1-2) :57-59
[2]   Molecular content of the deposition flux during reactive Ar/O2 magnetron sputtering of Al -: art. no. 054101 [J].
Andersson, JM ;
Wallin, E ;
Münger, EP ;
Helmersson, U .
APPLIED PHYSICS LETTERS, 2006, 88 (05) :1-3
[3]   Microstructure of α-alumina thin films deposited at low temperatures on chromia template layers [J].
Andersson, JM ;
Czigány, Z ;
Jin, P ;
Helmersson, U .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2004, 22 (01) :117-121
[4]   Fundamental understanding and modeling of reactive sputtering processes [J].
Berg, S ;
Nyberg, T .
THIN SOLID FILMS, 2005, 476 (02) :215-230
[5]   Crystal structure characterisation of filtered arc deposited alumina coatings: temperature and bias voltage [J].
Brill, R ;
Koch, F ;
Mazurelle, J ;
Levchuk, D ;
Balden, M ;
Yamada-Takamura, Y ;
Maier, H ;
Bolt, H .
SURFACE & COATINGS TECHNOLOGY, 2003, 174 :606-610
[6]   POSITIVE-ION BOMBARDMENT OF SUBSTRATES IN RF DIODE GLOW-DISCHARGE SPUTTERING [J].
COBURN, JW ;
KAY, E .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) :4965-4971
[7]   Influence of adsorbates, crystal structure, and target temperature on the sputtering yield and kinetic-energy distribution of excited Ni atoms [J].
Cortona, A ;
Husinsky, W ;
Betz, G .
PHYSICAL REVIEW B, 1999, 59 (23) :15495-15505
[8]   PLASMA DIAGNOSTICS BY ENERGY-RESOLVED QUADRUPOLE MASS-SPECTROMETRY OF A REACTIVE MAGNETRON SPUTTERING DISCHARGE FROM AN FE TARGET IN AR-H2S ATMOSPHERES [J].
ELLMER, K ;
LICHTENBERGER, D .
SURFACE & COATINGS TECHNOLOGY, 1995, 74-5 (1-3) :586-593
[9]   Spatial survey of a magnetron plasma sputtering system using a Langmuir probe [J].
Field, DJ ;
Dew, SK ;
Burrell, RE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2002, 20 (06) :2032-2041
[10]   ION SURFACE INTERACTIONS DURING VAPOR-PHASE CRYSTAL-GROWTH BY SPUTTERING, MBE, AND PLASMA-ENHANCED CVD - APPLICATIONS TO SEMICONDUCTORS [J].
GREENE, JE ;
BARNETT, SA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :285-302