Low density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy

被引：73

作者：

Mantovani, V

Sanguinetti, S

Guzzi, M

Grilli, E

Gurioli, M

Watanabe, K

Koguchi, N

机构：

[1] Univ Milano Bicocca, INFM, I-20125 Milan, Italy

[2] Univ Milano Bicocca, Dipartimento Sci Mat, I-20125 Milan, Italy

[3] Univ Florence, INFM, LENS, I-50019 Sesto Fiorentino, Italy

[4] Univ Florence, Dipartimento Fis, I-50019 Sesto Fiorentino, Italy

[5] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 96卷 / 08期

关键词：

D O I：

10.1063/1.1791756

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low temperature photoluminescence spectroscopy is used to analyze the effects of the Ga coverage and of the postgrowth thermal annealing on the electronic properties of low density (approximate to1x10(9)cm(-2)) self-assembled GaAs/AlGaAs quantum dots (QDs) grown by modified droplet epitaxy (MDE). We demonstrate that with the MDE method it is possible to obtain low density and high efficiency QD samples with high photoluminescence efficiency. Large modifications of the photoluminescence band, which depend on Ga coverage and thermal annealing, are found and quantitatively interpreted by means of a simple model based on the Al-Ga interdiffusion. (C) 2004 American Institute of Physics.

引用

页码：4416 / 4420

页数：5

共 25 条

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