Influence of chelating agents on the growth and photoelectrochemical responses of chemical bath-synthesized AgIn5S8 film electrodes

被引:19
作者
Cheng, Kong-Wei [1 ,2 ]
Wang, Sheng-Chih [1 ]
机构
[1] Chang Gung Univ, Dept Chem & Mat Engn, Tao Yuan 333, Taiwan
[2] Chang Gung Univ, Green Technol Res Ctr, Solar Cell Grp, Tao Yuan 333, Taiwan
关键词
Photoelectrode; X-ray diffraction; Optical property; Photocurrent density; PHOTOCATALYTIC H-2 EVOLUTION; VISIBLE-LIGHT IRRADIATION; THIN-FILMS; OPTICAL CHARACTERIZATION; PHYSICAL-PROPERTIES; SINGLE-CRYSTALS; INDIUM SULFIDE; DEPOSITION; CUIN5S8;
D O I
10.1016/j.solmat.2008.11.004
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
An aqueous method for the deposition of silver-indium-sulfide ternary semiconductor film electrodes is presented. Various deposition parameters, such as reaction temperature and molar ratios of different chelating agents, were changed in order to grow uniform and adherent films on indium-tin-oxide glass substrates. With a reaction temperature higher than 65 C, a film composed of AgIn5S8 was grown on the substrates in our experimental conditions. The direct and indirect energy band gaps of samples prepared in this study varied from 1.70 to 1.97 eV and 1.61 to 1.72 eV, respectively. The maximum photocurrent density of samples in this study reached 3.0 mA/cm(2) at an external potential of +1.0V vs. a Pt electrode under illumination using a 300W Xe lamp system with the light intensity set at 100 mW/cm(2). Crown Copyright (C) 2008 Published by Elsevier B.V. All rights reserved.
引用
收藏
页码:307 / 314
页数:8
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