Silicon Carbide as a Platform for Power Electronics

被引：297

作者：

Eddy, C. R., Jr. ^{[1
]}

Gaskill, D. K. ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

SCIENCE | 2009年 / 324卷 / 5933期

关键词：

CHEMICAL-VAPOR-DEPOSITION; GROWTH;

D O I：

10.1126/science.1168704

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：1398 / 1400

页数：3

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SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 :61-66

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