Organic light-emitting diodes with a nanostructured TiO2 layer at the interface between ITO and NPB layers

被引：38

作者：

Zhang, ZF ^{[1
]}

Deng, ZB ^{[1
]}

Liang, CJ ^{[1
]}

Zhang, MX ^{[1
]}

Xu, DH ^{[1
]}

机构：

[1] No Jiaotong Univ, Inst Optoelect Technol, Dept Phys, Beijing 100044, Peoples R China

来源：

DISPLAYS | 2003年 / 24卷 / 4-5期

基金：

中国国家自然科学基金;

关键词：

organic light-emitting diode; TiO2; brightness; efficiency; the tunneling effect;

D O I：

10.1016/j.displa.2004.01.010

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Organic light-emitting diodes (OLEDs) with a nanostructured TiO2 layer at the interface between indium tin oxide and a-naphtylphenyliphenyl diamine layers were fabricated using a vacuum evaporation method. The nanostructured TiO2 layer was achieved by the Sol-Gel method. Compared to the different thickness of the buffer layer, the OLEDs with the 6 nm buffer layer showed the highest efficiency. The enhancements in efficiency result from an improved balance of hole and electron injections and a more homogeneous adhesion of the buffer layer inserted. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：231 / 234

页数：4

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