Electrical properties of silicon and beryllium doped (AlyGa1-y)(0.52)In0.48P

被引:11
作者
Najda, SP
Kean, A
Duggan, G
机构
[1] Sharp Laboratories of Europe Ltd., Oxford OX4 4GA, Edmund Halley Rd., Oxford Sci. Park
关键词
D O I
10.1063/1.366167
中图分类号
O59 [应用物理学];
学科分类号
摘要
The electrical properties of silicon and beryllium doped (AlyGa1-y)(0.52)In0.48P grown by gas source molecular beam epitaxy were studied. Unintentionally doped (GaIn)P has a n-type background concentration of 5.1 X 10(14) cm(-3) and a free-carrier mobility of similar to 3500 cm(2)/V s at room temperature. Hall measurements of n-(GaIn)P give a linear increase in the free-carrier concentration for values up to 4.0 X 10(18) cm(-3). Silicon doping of (GaIn)P and (Al0.7Ga0.3)(0.52)In0.48P reveals a linear increase in the impurity carrier concentration for values up to 8.0 X 10(18) cm(-3) by capacitance-voltage measurements. In contrast, the free electron concentration saturates at a value of 4.8 X 10(17) cm(-3) in (Al0.7Ga0.3)(0.52)In0.48P, due to Fermi-level pinning at the DX level. Beryllium doping of (GaIn)P reveals a linear increase in the Hall free-hole concentration for values up to 1.4 X 10(19) cm(-3) with a room-temperature mobility of similar to 34 cm(2)/V s. (C) 1997 American Institute of Physics. [S0021-8979(97)00621-X].
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页码:4408 / 4411
页数:4
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