MG DOPING OF GAINP GROWN BY CHEMICAL BEAM EPITAXY USING BIS-CYCLOPENTADIENYL MAGNESIUM

被引：11

作者：

COURMONT, S

MAUREL, P

GRATTEPAIN, C

GARCIA, JC

机构：

[1] Thomson-CSF, Laboratoire Central de Recherches, 91404 Orsay Cedex, Domaine de Corbeville

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 11期

关键词：

D O I：

10.1063/1.111938

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the p-type doping of GaInP grown by chemical beam epitaxy using bis-cyclopentadienyl magnesium (Cp2Mg). Hole concentrations up to the 10(18) cm-3 level have been achieved for substrate temperature as high as 550-degrees-C and Mg incorporation was found to grow linearly with the Cp2Mg flow rate in this range. The doping concentration decreases as the substrate temperature increases with an activation energy of 2.15 eV (50 kcal/mol). Two other parameters are the V/III ratio and the growth rate which both enhance the Mg doping when increased.

引用

页码：1371 / 1373

页数：3

共 7 条

[1] MG DOPING OF INP AND INGAAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY USING BIS-CYCLOPENTADIENYL MAGNESIUM [J].