Preparation and dielectric properties of the multilayer capacitor with (Ba, Sr)TiO3 thin layers by metalorganic chemical vapor deposition

Barium strontium titanate ((Ba, Sr)TiO3; BST) thin films were prepared on Pt-coated magnesium oxide single-crystal substrates (Pt(111)/MgO(100) and Pt(100)/MgO(100)) at 650 degrees C by metalorganic chemical vapor deposition (MOCVD). The BST films with a perovskite single phase were obtained. Their room-temperature dielectric constant was 400-590 measured at 100mV and 1kHz. The leakage current density was below the order of 10(-7) A/cm(2) at 3V, and the breakdown field was above 500kV/cm. In addition, the multilayer capacitor with five layers of BST was prepared. The room-temperature capacitance with an effective electrode area of 0.16 mm(2) was 20nF at 100mV and 1kHz. The leakage current was on the order of 10(-8) A at 1V, and on order of 10(-5) A at 3V.