Study of interfacial reactions and phase stabilization of mixed Sc, Dy, Hf high-k oxides by attenuated total reflectance infrared spectroscopy

被引:35
作者
Hardy, A. [1 ,2 ]
Adelmann, C. [3 ]
Van Elshocht, S. [3 ]
Van den Rul, H. [1 ,2 ]
Van Bael, M. K. [1 ,2 ]
De Gendt, S. [3 ,5 ]
D'Olieslaeger, M. [2 ,4 ]
Heyns, M. [3 ,5 ]
Kittl, J. A. [3 ]
Mullens, J. [1 ]
机构
[1] Hasselt Univ, Inorgan & Phys Chem IMO, B-3590 Diepenbeek, Belgium
[2] IMEC VZW, Div IMOMEC, Diepenbeek, Belgium
[3] IMEC VZW, Heverlee, Belgium
[4] Hasselt Univ, Inst Mat Res, B-3590 Diepenbeek, Belgium
[5] Katholieke Univ Leuven, Dept Chem, B-3001 Heverlee, Belgium
关键词
ATR-FTIR; Hafnia; Scandate; Rare earth; High permittivity; LIQUID-INJECTION MOCVD; RARE-EARTH-OXIDES; ATOMIC LAYER DEPOSITION; SILICATE FORMATION; SPECTRA; GROWTH; FILMS; SIO2; DIELECTRICS; ABSORPTION;
D O I
10.1016/j.apsusc.2009.04.184
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Grazing angle attenuated total reflectance Fourier transform infrared spectroscopy is applied to study ultrathin film Hf4+, Sc3+ and Dy3+ oxides, due to its high surface sensitivity. The (multi) metal oxides studied, are of interest as high-k dielectrics. Important properties affecting the permittivity, such as the amorphous or crystalline phase and interfacial reactions, are characterized. Dy2O3 is prone to silicate formation on SiO2/Si substrates, which is expressed in DyScO3 as well, but suppressed in HfDyOx. Sc2O3, HfScOx and HfO2 were found to be stable in contact with SiO2/Si. Deposition of HfO2 in between Dy2O3 or DyScO3 and SiO2, prevents silicate formation, showing a buffer-like behavior for the HfO2. Doping of HfO2 with Dy or Sc prevents monoclinic phase crystallization. Instead, a cubic phase is obtained, which allows a higher permittivity of the films. The phase remains stable after anneal at high temperature. (c) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:7812 / 7817
页数:6
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