Growth of dysprosium-, scandium-, and hafnium-based third generation high-κ dielectrics by atomic vapor deposition

被引：23

作者：

Adelmann, Christoph ^{[1
]}

Lehnen, Peer

Van Elshocht, Sven

Zhao, Chao

Brijs, Bert

Franquet, Alexis

Conard, Thierry

Roeckerath, Martin

Schubert, Jurgen

Boissière, Olivier

Lohe, Christoph

De Gendt, Stefan

机构：

[1] IMEC VZW, B-3001 Heverlee, Belgium

[2] AIXTRON AG, D-52072 Aachen, Germany

[3] Res Ctr Juelich, Ctr Nanoelect Syst Informat Technol, Inst Bio & Nanosyst IBN 1 IT, D-52425 Julich, Germany

[4] Univ Leuven, Dept Chem, B-3001 Heverlee, Belgium

来源：

CHEMICAL VAPOR DEPOSITION | 2007年 / 13卷 / 10期

关键词：

AVD; dysprosium oxide; hafnium oxide; high-kappa oxides; scandium oxide;

D O I：

10.1002/cvde.200706604

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Thin dysprosium-, scandium-, and hafnium-based oxide dielectric films are deposited by atomic vapor deposition (AVD) using tris(6-ethyl-2,2-dimethyl-3,5-decanedionato) dysprosium [Dy(EDMDD)(3)], tris(6-ethyl-2,2-dimethyl-3,5-decanedionato) scandium [Sc(EDMDD)(3)], and bis(tert-butoxide) bis(methoxymethyl propanoxide) hafnium [Hf(O'Bu)(2)(mmp)(2)] as precursors. Spectroscopic ellipsometry (SE), Rutherford backscattering (RBS) spectrometry, and X-ray photoemission spectroscopy (XPS) demonstrate good control of the thickness and composition of the films. In particular, ternary and quaternary oxide alloys of any desired composition are grown. X-ray diffraction (XRD) shows that the (DY0.5SC0.5)(2)O-3 films are amorphous as grown, whereas the (Dy0.5Hf0.5)(4)O-7 and (SC0.5Hf0.5)(4)O-7 films are crystalline. The crystal structures of DyHf1-xOy and ScxHf1-xOy change from monoclinic to cubic around x similar to 0.1.

引用

页码：567 / 573

页数：7

共 34 条

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