High-power GaN MESFET on sapphire substrate

被引：44

作者：

Gaquiere, C ^{[1
]}

Trassaert, S ^{[1
]}

Boudart, B ^{[1
]}

Crosnier, Y ^{[1
]}

机构：

[1] Inst Electron & Microelectron Nord, Dept Hyperfrequences & Semicond, CNRS, UMR 9929, F-59652 Villeneuve Dascq, France

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 2000年 / 10卷 / 01期

关键词：

MESFET; microwave power;

D O I：

10.1109/75.842074

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first power results of GaN MESFET achieved at 2 GHz are presented. A power density of 2.2 W/mm has been obtained with an associated power-added efficiency of 27% at V-ds = 30 V and v(gs) = -2 V. These results represent a significant improvement over similar MESFET's or HFET's grown on GaAs or InP substrates.

引用

页码：19 / 20

页数：2

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