AlGaAs/GaAs high electron mobility transistor with a low-temperature grown GaAs ion damage blocking layer

We have successfully used a thin layer (similar to 200 Angstrom) of annealed low-temperature GaAs (LT-GaAs) to reduce ion damage that would occur during the formation of a dry-etch gate recess of a high electron mobility transistor. Compared to structures without an ion damage blocking layer, the devices with a thin layer of LT-GaAs are more robust against ion damage. This is important for the application of ion-assisted processing to the fabrication of electronic devices, such as dry etching used to achieve gate recessing. (C) 1997 American Institute of Physics.