MODEL FOR CONDUCTANCE IN DRY-ETCH DAMAGED N-GAAS STRUCTURES

被引：37

作者：

RAHMAN, M ^{[1
]}

JOHNSON, NP ^{[1
]}

FOAD, MA ^{[1
]}

LONG, AR ^{[1
]}

HOLLAND, MC ^{[1
]}

WILKINSON, CDW ^{[1
]}

机构：

[1] UNIV GLASGOW,DEPT PHYS & ASTRON,GLASGOW G12 8QQ,SCOTLAND

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 19期

关键词：

D O I：

10.1063/1.108235

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A model for the effects of dry-etch damage on the conductances of etched structures is developed. Expressions for defect distribution are obtained for top-surface and sidewall damage. The expression for sidewall damage is used in the calculation of wire conductances. The model accounts accurately for changes in experimentally measured conductances Of SiCl4-etched n+-GaAs wires with variations in material carrier concentration, epilayer thickness, and etch time/depth. The analysis indicates that defects are created at a significant rate at sidewalls as compared to top surfaces.

引用

页码：2335 / 2337

页数：3

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