DRY ETCH INDUCED DAMAGE IN GAAS INVESTIGATED USING RAMAN-SCATTERING SPECTROSCOPY

被引：48

作者：

LISHAN, DG ^{[1
]}

WONG, HF ^{[1
]}

GREEN, DL ^{[1
]}

HU, EL ^{[1
]}

MERZ, JL ^{[1
]}

KIRILLOV, D ^{[1
]}

机构：

[1] VARIAN ASSOCIATES,RES CTR,PALO ALTO,CA 94303

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.584784

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：556 / 560

页数：5

共 17 条

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[2] REACTIVE ION ETCHING OF GAAS USING A MIXTURE OF METHANE AND HYDROGEN
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[3] PASSIVATION OF DONORS IN ELECTRON-BEAM LITHOGRAPHICALLY DEFINED NANOSTRUCTURES AFTER METHANE HYDROGEN REACTIVE ION ETCHING
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06): : 1911 - 1915
[4] DONOR NEUTRALIZATION IN GAAS(SI) BY ATOMIC-HYDROGEN
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[J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 108 - 110
[5] RADIATION-DAMAGE OF GALLIUM-ARSENIDE INDUCED BY REACTIVE ION ETCHING
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TERADA, T
TOYODA, N
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (10) : 4109 - 4113
[6] REACTIVE ION ETCHING OF GAAS IN A CHLORINE PLASMA
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HOWARD, RE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (01): : 85 - 88
[7] HU EL, 1987, SPIE, V797
[8] RAMAN-SCATTERING STUDY OF PLASMA-ETCHING DAMAGE IN GAAS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (06): : 1316 - 1318
[9] KNOEDLER CM, 1988, JUN EL MAT C BOULD
[10] KURODA F, 1984 P GAAS IC S, P125