INVESTIGATION OF PLASMA ETCH INDUCED DAMAGE IN COMPOUND SEMICONDUCTOR-DEVICES

被引：11

作者：

SHUL, RJ ^{[1
]}

LOVEJOY, ML ^{[1
]}

HETHERINGTON, DL ^{[1
]}

RIEGER, DJ ^{[1
]}

VAWTER, GA ^{[1
]}

KLEM, JF ^{[1
]}

MELLOCH, MR ^{[1
]}

机构：

[1] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1994年 / 12卷 / 04期

关键词：

D O I：

10.1116/1.579320

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have investigated the electrical performance of mesa-isolated GaAs pn-junction diodes to determine the plasma-induced damage effects from reactive ion and reactive ion beam etching (REBE). A variety of plasma chemistries (SiCl4, BCl3, BCl3/Cl2, and Cl2) and ion energies ranging from 100 to 400 eV were studied. We have observed that many of the reactive ion etching BCl3/Cl2 plasmas and RIBE Cl2 plasmas yield diodes with low reverse-bias currents that are comparable to the electrical characteristics of wet-chemical-etched devices. The reverse-bias leakage currents are independent of surface morphology and sidewall profiles.

引用

页码：1351 / 1355

页数：5

共 15 条

[1] REACTIVE ION ETCHING INDUCED DAMAGE IN GAAS AND AL0.3GA0.7AS USING SICL4
CHEUNG, R
THOMS, S
WATT, M
FOAD, MA
SOTOMAYORTORRES, CM
WILKINSON, CDW
COX, UJ
COWLEY, RA
DUNSCOMBE, C
WILLIAMS, RH
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (09) : 1189 - 1198
[2] COMPARISON OF DAMAGE IN THE DRY ETCHING OF GAAS BY CONVENTIONAL REACTIVE ION ETCHING AND BY REACTIVE ION ETCHING WITH AN ELECTRON-CYCLOTRON RESONANCE GENERATED PLASMA
CHEUNG, R
LEE, YH
LEE, KY
SMITH, TP
KERN, DP
BEAUMONT, SP
WILKINSON, CDW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06): : 1462 - 1466
[3] ELECTRICAL DAMAGE IN NORMAL-GAAS DUE TO METHANE HYDROGEN RIE
COLLOT, P
GAONACH, C
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (03) : 237 - 241
[4] PLASMA-ETCHING OF III-V SEMICONDUCTORS IN CH4/H2/AR ELECTRON-CYCLOTRON RESONANCE DISCHARGES
CONSTANTINE, C
JOHNSON, D
PEARTON, SJ
CHAKRABARTI, UK
EMERSON, AB
HOBSON, WS
KINSELLA, AP
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04): : 596 - 606
[5] SURFACE AND PERIMETER RECOMBINATION IN GAAS DIODES - AN EXPERIMENTAL AND THEORETICAL INVESTIGATION
DODD, PE
STELLWAG, TB
MELLOCH, MR
LUNDSTROM, MS
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (06) : 1253 - 1261
[6] DAMAGE-FREE REACTIVE ION ETCHING OF GAAS-FET GATE RECESS
HILTON, KP
WOODWARD, J
DAWSEY, JR
BALL, G
GILL, SS
[J]. ELECTRONICS LETTERS, 1989, 25 (24) : 1617 - 1618
[7] REACTIVE ION ETCHING OF GAAS IN CHLORINE AND RESULTING SURFACE DAMAGE
LEE, BS
BARATTE, H
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (03) : 980 - 983
[8] DRY ETCH INDUCED DAMAGE IN GAAS INVESTIGATED USING RAMAN-SCATTERING SPECTROSCOPY
LISHAN, DG
WONG, HF
GREEN, DL
HU, EL
MERZ, JL
KIRILLOV, D
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (03): : 556 - 560
[9] SURFACE DAMAGE ON GAAS INDUCED BY REACTIVE ION ETCHING AND SPUTTER ETCHING
PANG, SW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) : 784 - 787
[10] DRY ETCHING INDUCED DAMAGE ON VERTICAL SIDEWALLS OF GAAS CHANNELS
PANG, SW
GOODHUE, WD
LYSZCZARZ, TM
EHRLICH, DJ
GOODMAN, RB
JOHNSON, GD
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06): : 1916 - 1920

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