REACTIVE ION ETCHING INDUCED DAMAGE IN GAAS AND AL0.3GA0.7AS USING SICL4

被引：23

作者：

CHEUNG, R

THOMS, S

WATT, M

FOAD, MA

SOTOMAYORTORRES, CM

WILKINSON, CDW

COX, UJ

COWLEY, RA

DUNSCOMBE, C

WILLIAMS, RH

机构：

[1] UNIV GLASGOW,DEPT ELECTR & ELECT ENGN,NANOELECTR RES CTR,GLASGOW G12 8QQ,SCOTLAND

[2] UNIV WALES COLL CARDIFF,COLL CARDIFF,DEPT PHYS & ASTRON,CARDIFF CF1 3TH,WALES

[3] UNIV EDINBURGH,DEPT PHYS,EDINBURGH EH9 3JZ,MIDLOTHIAN,SCOTLAND

[4] UNIV OXFORD,CLARENDON LAB,OXFORD,ENGLAND

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 09期

关键词：

D O I：

10.1088/0268-1242/7/9/008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the etching characteristics of GaAs and Al0.3Ga0.7As using SiCl4 as the etching gas. The effect of damage caused on the etched surface has been characterized by employing Schottky diode performance, low-temperature integrated band-gap photoluminescence, Raman scattering and high-resolution x-ray photoelectron spectroscopy, and, for the first time, the usefulness of employing glancing x-ray reflectivity for the identification of surface damage is explored. Using high-resolution fabrication techniques, a novel procedure for constructing a sidewall Schottky diode has been developed to allow the amount of induced sidewall damage to be quantified. In addition, the deteriorative effect of the surface damage layer is observed to remain unchanged with etch time.

引用

页码：1189 / 1198

页数：10

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