COMPARISON OF DAMAGE IN THE DRY ETCHING OF GAAS BY CONVENTIONAL REACTIVE ION ETCHING AND BY REACTIVE ION ETCHING WITH AN ELECTRON-CYCLOTRON RESONANCE GENERATED PLASMA

被引：40

作者：

CHEUNG, R ^{[1
]}

LEE, YH ^{[1
]}

LEE, KY ^{[1
]}

SMITH, TP ^{[1
]}

KERN, DP ^{[1
]}

BEAUMONT, SP ^{[1
]}

WILKINSON, CDW ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,DIV RES,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 06期

关键词：

D O I：

10.1116/1.584512

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1462 / 1466

页数：5

共 39 条

[1] DAMAGE AND CONTAMINATION-FREE GAAS AND ALGAAS ETCHING USING A NOVEL ULTRAHIGH-VACUUM REACTIVE ION-BEAM ETCHING SYSTEM WITH ETCHED SURFACE MONITORING AND CLEANING METHOD
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[2] SIDEWALL DAMAGE IN N+-GAAS QUANTUM WIRES FROM REACTIVE ION ETCHING
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[J]. APPLIED PHYSICS LETTERS, 1989, 54 (21) : 2130 - 2132
[3] REACTIVE ION ETCHING OF GAAS USING A MIXTURE OF METHANE AND HYDROGEN
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WILKINSON, CDW
[J]. ELECTRONICS LETTERS, 1987, 23 (16) : 857 - 859
[4] PASSIVATION OF DONORS IN ELECTRON-BEAM LITHOGRAPHICALLY DEFINED NANOSTRUCTURES AFTER METHANE HYDROGEN REACTIVE ION ETCHING
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06): : 1911 - 1915
[5] Ghosh P. K., 1983, CHEM ANAL, V67
[6] GOODHUE WD, 1987, P C GAAS RELATED COM, P349
[7] SELECTIVE DRY ETCHING OF ALGAAS-GAAS HETEROJUNCTION
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : L847 - L850
[8] REACTIVE-ION ETCHING OF GAAS AND INP USING CCL2F2-AR-O2
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HOWARD, RE
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (11) : 1022 - 1024
[9] REACTIVE ION ETCHING OF GAAS IN A CHLORINE PLASMA
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HOWARD, RE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (01): : 85 - 88
[10] PRACTICAL ASPECTS OF MICROFABRICATION IN THE 100 NM REGIME
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 1096 - 1100

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