Nonvolatile Resistive Switching Memory Properties of Thermally Annealed Titania Precursor/Polyelectrolyte Multilayers

We describe a novel and versatile approach for preparing resistive switching memory devices based on transition metal oxides. A titania precursor and poly(allyamine hydrochloride) (PAH) layers were deposited alternately onto platinum (Pt)-coated silicon Substrates using electrostatic interactions. The multilayers were then converted to TiO2 nanocomposite (TiO2 NC) films after thermal annealing. A top electrode was coated oil the TiO2 NC films to complete device fabrication. When all external bias was applied to the devices, it switching phenomenon independent of the voltage polarity (i.e., unipolar switching) was observed at low operating voltages (approximately 0.4 V-RESET and 1.3 V-SET), which is comparable to that observed in conventional devices fabricated by sputtering or metal organic chemical vapor deposition processes. The reported approach offers new opportunities for preparing inorganic material-based resistive switching memory devices with tailored electronic properties, allowing facile solution processing.