InGaAs quantum dot molecules around self-assembled GaAs nanomound templates

被引：107

作者：

Lee, J. H. ^{[1
]}

Wang, Zh. M. ^{[1
]}

Strom, N. W. ^{[1
]}

Mazur, Yu. I. ^{[1
]}

Salamo, G. J. ^{[1
]}

机构：

[1] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 20期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2388049

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Several distinctive self-assembled InGaAs quantum dot molecules (QDMs) are studied. The QDMs self-assemble around nanoscale-sized GaAs moundlike templates fabricated by droplet homoepitaxy. Depending on the specific InAs monolayer coverage, the number of QDs per GaAs mound ranges from two to six (bi-QDMs to hexa-QDMs). The Ga contribution from the mounds is analyzed in determining the morphologies of the QDMs, with respect to the InAs coverages ranging between 0.8 and 2.4 ML. Optical characterization shows that the resulting nanostructures are high-quality nanocrystals. (c) 2006 American Institute of Physics.

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共 22 条

[1]

[Anonymous], PHYS REV A

[2] InAs/GaAs quantum dot lasers with dots in an asymmetric InxGa1-xAs quantum well structure [J].

Choi, WJ ;

Song, JD ;

Lee, JI ;

Kim, KC ;

Kim, TG .

PHYSICA B-CONDENSED MATTER, 2006, 376 :886-889

[3] Formation of GaAs/AlGaAs and InGaAs/GaAs nanorings by droplet molecular-beam epitaxy [J].

Gong, Z ;

Niu, ZC ;

Huang, SS ;

Fang, ZD ;

Sun, BQ ;

Xia, JB .

APPLIED PHYSICS LETTERS, 2005, 87 (09)

[4] Slowdown in development of self-assembled InAs/GaAs(001) dots near the critical thickness [J].

Hanada, Takashi ;

Totsuka, Hirofumi ;

Hong, Soon-Ku ;

Godo, Kenji ;

Miyajima, Kensuke ;

Goto, Takenari ;

Yao, Takafumi .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (04) :1886-1890

[5] Spin-based quantum computation in multielectron quantum dots [J].

Hu, XD ;

Das Sarma, S .

PHYSICAL REVIEW A, 2001, 64 (04) :5

[6] Are quantum dots useful for quantum computation? [J].

Imamoglu, A .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 16 (01) :47-50

[7] InAs/GaAs quantum dot intermixing induced by proton implantation [J].

Ji, YL ;

Lu, W ;

Chen, GB ;

Chen, XS ;

Wang, Q .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (02) :1208-1211

[8] Evolution between self-assembled single and double ring-like nanostructures [J].

Lee, J. H. ;

Wang, Z. M. ;

Abuwaar, Z. Y. ;

Strom, N. W. ;

Salamo, G. J. .

NANOTECHNOLOGY, 2006, 17 (15) :3973-3976

[9] Influence of GaAs/InAs quasi-monolayer on the structural and optical properties of InAs/GaAs quantum dots [J].

Leem, JY ;

Jeon, M ;

Lee, J ;

Cho, G ;

Lee, CR ;

Kim, JS ;

Kang, SK ;

Ban, SI ;

Lee, JI ;

Cho, HK .

JOURNAL OF CRYSTAL GROWTH, 2003, 252 (04) :493-498

[10] Quantum computing [J].

Li, SS ;

Long, GL ;

Bai, FS ;

Feng, SL ;

Zheng, HZ .

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2001, 98 (21) :11847-11848