Formation of GaAs/AlGaAs and InGaAs/GaAs nanorings by droplet molecular-beam epitaxy

被引：68

作者：

Gong, Z ^{[1
]}

Niu, ZC ^{[1
]}

Huang, SS ^{[1
]}

Fang, ZD ^{[1
]}

Sun, BQ ^{[1
]}

Xia, JB ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 09期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2037193

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaAs/AlGaAs lattice-matched nanorings are formed on GaAs (100) substrates by droplet epitaxy. The crucial step in the formation of nanorings is annealing Ga droplets under As flux for proper time. The observed morphologic evolution of Ga droplets during annealing does not support the hypothesis that As atoms preferentially react with Ga around the periphery of the droplets, but somehow relates to a dewetting process similar to that of unstable films. Photoluminescene (PL) test results confirm the quantum-confinement effect of these GaAs nanorings. Using similar methods, we have fabricated InGaAs/GaAs lattice-mismatched rings. (c) 2005 American Institute of Physics.

引用

页数：3

共 34 条

[1] Wetting droplet instability and quantum ring formation [J].