Evolution between self-assembled single and double ring-like nanostructures

被引:50
作者
Lee, J. H. [1 ]
Wang, Z. M. [1 ]
Abuwaar, Z. Y. [1 ]
Strom, N. W. [1 ]
Salamo, G. J. [1 ]
机构
[1] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA
关键词
D O I
10.1088/0957-4484/17/15/061
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The evolution between lattice-matched GaAs/Al0.3Ga0.7As single and double ring-like nanostructures is studied, with an emphasis on the construction and destruction of the observed outer ring. Using droplet epitaxy, this was achieved by directly controlling the Ga surface diffusion on GaAs( 100). Double ring-like nanostructures were observed at relatively low temperatures under a fixed As-4 flux (beam equivalent pressure (BEP) of 6.4 mu Torr) and at a fixed temperature under a high As-4 flux. The construction of the outer ring can be controlled through surface diffusion by varying the substrate temperature or the As-4 flux. Single ring-like nanostructures were realized both at relatively high temperatures under a fixed As-4 flux, and at low temperatures under a relatively low As-4
引用
收藏
页码:3973 / 3976
页数:4
相关论文
共 16 条
[1]   Characterization of self-assembled InAs quantum dots with InAlAs/InGaAs strain-reduced layers by photoluminescence spectroscopy [J].
Chang, KP ;
Yang, SL ;
Chuu, DS ;
Hsiao, RS ;
Chen, JF ;
Wei, L ;
Wang, JS ;
Chi, JY .
JOURNAL OF APPLIED PHYSICS, 2005, 97 (08)
[2]   Optical modes in semiconductor microtube ring resonators - art. no. 077403 [J].
Kipp, T ;
Welsch, H ;
Strelow, C ;
Heyn, C ;
Heitmann, D .
PHYSICAL REVIEW LETTERS, 2006, 96 (07)
[3]   Optical studies of individual InAs quantum dots in GaAs: Few-particle effects [J].
Landin, L ;
Miller, MS ;
Pistol, ME ;
Pryor, CE ;
Samuelson, L .
SCIENCE, 1998, 280 (5361) :262-264
[4]   Fabrication of self-assembled GaAs/AlGaAs quantum dots by low-temperature droplet epitaxy [J].
Lee, CD ;
Park, C ;
Lee, HJ ;
Lee, KS ;
Park, SJ ;
Park, CG ;
Noh, SK ;
Koguchi, N .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (12B) :7158-7160
[5]   Selective growth of InGaAs/GaAs quantum dot chains on pre-patterned GaAs(100) [J].
Lee, J. H. ;
Wang, Zh M. ;
Liang, B. L. ;
T Black, W. ;
Kunets, Vas P. ;
Mazur, Yu I. ;
Salamo, G. J. .
NANOTECHNOLOGY, 2006, 17 (09) :2275-2278
[6]  
LI SS, 2005, NANOSCALE RES LETT, V1
[7]   Multilayered gated lateral quantum dot devices [J].
Liang, CT ;
Simmons, MY ;
Smith, CG ;
Kim, GH ;
Ritchie, DA ;
Pepper, M .
APPLIED PHYSICS LETTERS, 2000, 76 (09) :1134-1136
[8]   Self-assembly of concentric quantum double rings [J].
Mano, T ;
Kuroda, T ;
Sanguinetti, S ;
Ochiai, T ;
Tateno, T ;
Kim, J ;
Noda, T ;
Kawabe, M ;
Sakoda, K ;
Kido, G ;
Koguchi, N .
NANO LETTERS, 2005, 5 (03) :425-428
[9]   New quantum dot transistor [J].
Mokerov, VG ;
Fedorov, YV ;
Velikovski, LE ;
Scherbakova, MY .
NANOTECHNOLOGY, 2001, 12 (04) :552-555
[10]   New physics and devices based on self-assembled semiconductor quantum dots [J].
Mowbray, DJ ;
Skolnick, MS .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2005, 38 (13) :2059-2076