Selective growth of InGaAs/GaAs quantum dot chains on pre-patterned GaAs(100)

被引：22

作者：

Lee, J. H. ^{[1
]}

Wang, Zh M. ^{[1
]}

Liang, B. L. ^{[1
]}

T Black, W. ^{[1
]}

Kunets, Vas P. ^{[1
]}

Mazur, Yu I. ^{[1
]}

Salamo, G. J. ^{[1
]}

机构：

[1] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA

来源：

NANOTECHNOLOGY | 2006年 / 17卷 / 09期

关键词：

D O I：

10.1088/0957-4484/17/9/034

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Self-organized InGaAs quantum dot chains grown by molecular beam epitaxy were investigated using vertical stacking techniques on pre-patterned GaAs( 100) substrates. The results demonstrate the formation of quantum dot (QD) chains only on desired spatial regions. In addition to QD chains, the results show that almost any shape of lines of QDs are possible depending on the faceted pre-patterned substrate. The experimental results suggest that this approach has the potential to be used to fabricate single QD chains or necklaces or almost any pattern.

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页码：2275 / 2278

页数：4

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