High anisotropy of lateral alignment in multilayered (In,Ga)As/GaAs(100) quantum dot structures

被引：33

作者：

Wang, ZM ^{[1
]}

Churchill, H ^{[1
]}

George, CE ^{[1
]}

Salamo, GJ ^{[1
]}

机构：

[1] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 96卷 / 11期

关键词：

D O I：

10.1063/1.1815382

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A formation process for long chains of quantum dots during the molecular-beam epitaxial growth of (In,Ga)As/GaAs(100) multilayers is presented. The morphology evolution monitored by atomic force microscopy for a series of (In,Ga)As layers demonstrates that the highly anisotropic lateral alignment of dots is gradually developed as the result of the strain field interaction mediated by the GaAs spacer coupled with the anisotropic surface kinetics that occurs during capping the dots. The dot-chain structure, providing unique properties of its own, is demonstrated to serve as a template for the spatially controlled growth of strained quantum dots in general. (C) 2004 American Institute of Physics.

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页码：6908 / 6911

页数：4

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