Growth of low-density InAs/GaAs quantum dots on a substrate with an intentional temperature gradient by molecular beam epitaxy

被引：12

作者：

Jin, P ^{[1
]}

Ye, XL ^{[1
]}

Wang, ZG ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

NANOTECHNOLOGY | 2005年 / 16卷 / 12期

关键词：

D O I：

10.1088/0957-4484/16/12/005

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

InAs was deposited by molecular beam epitaxy (MBE) on a GaAs substrate with an intentional temperature gradient from centre to edge. Two-dimensional (2D) to three-dimensional (3D) morphology evolution was found along the direction in which the substrate temperature was decreasing. Quantum dots (QDs) with density as low as similar to 8 x 10(6) cm(-2) were formed in some regions. We attribute the morphological evolution to the temperature-dependent desorption of deposited indium and the intermixing between deposited indium and gallium from the buffer.

引用

页码：2775 / 2778

页数：4

共 15 条

[1]

Bimberg D., 1999, QUANTUM DOT HETEROST

[2] Nano-aperture fabrication for single quantum dot spectroscopy [J].

Håkanson, U ;

Persson, J ;

Persson, F ;

Svensson, H ;

Montelius, L ;

Johansson, MKJ .

NANOTECHNOLOGY, 2003, 14 (06) :675-679

[3] Stability of InAs quantum dots [J].

Heyn, C .

PHYSICAL REVIEW B, 2002, 66 (07) :1-4

[4] Critical coverage for strain-induced formation of InAs quantum dots [J].

Heyn, C .

PHYSICAL REVIEW B, 2001, 64 (16)

[5] Density and size control of self-assembled InAs quantum dots: preparation of very low-density dots by post-annealing [J].

Kamiya, I ;

Tanaka, I ;

Ohtsuki, O ;

Sakaki, H .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4) :1172-1175

[6] Resonant tunneling through a single self-assembled InAs quantum dot in a micro-RTD structure [J].

Kamiya, I ;

Tanaka, I ;

Tanaka, K ;

Yamada, F ;

Shinozuka, Y ;

Sakaki, H .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4) :131-133

[7] High detectivity InAs quantum dot infrared photodetectors [J].

Kim, ET ;

Madhukar, A ;

Ye, ZM ;

Campbell, JC .

APPLIED PHYSICS LETTERS, 2004, 84 (17) :3277-3279

[8] Scaling behavior in InAs/GaAs(001) quantum-dot formation [J].

Krzyzewski, TJ ;

Joyce, PB ;

Bell, GR ;

Jones, TS .

PHYSICAL REVIEW B, 2002, 66 (20) :1-4

[9] CRITICAL LAYER THICKNESS FOR SELF-ASSEMBLED INAS ISLANDS ON GAAS [J].

LEONARD, D ;

POND, K ;

PETROFF, PM .

PHYSICAL REVIEW B, 1994, 50 (16) :11687-11692

[10]

OK SH, 2005, P SPIE INT SOC OPT E, V5628, P381

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