High detectivity InAs quantum dot infrared photodetectors

被引：201

作者：

Kim, ET ^{[1
]}

Madhukar, A

Ye, ZM

Campbell, JC

机构：

[1] Univ So Calif, Nanostruct Mat & Devices Lab, Dept Mat Sci, Los Angeles, CA 90089 USA

[2] Univ So Calif, Nanostruct Mat & Devices Lab, Dept Phys, Los Angeles, CA 90089 USA

[3] Univ Texas, Microelect Res Ctr, Austin, TX 78758 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 17期

关键词：

D O I：

10.1063/1.1719259

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a high detectivity of 3x10(11) cm Hz(1/2)/W at 78 K for normal-incidence quantum dot infrared photodetectors with ten layers of undoped InAs/InGaAs/GaAs quantum dot active regions. The high detectivity seen at 1.4 V corresponds to photoresponse peaks at 9.3 and 8.7 mum for positive and negative bias, respectively. (C) 2004 American Institute of Physics.

引用

页码：3277 / 3279

页数：3

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