Photovoltaic quantum-dot infrared detectors

被引:58
作者
Pan, D
Towe, E [1 ]
Kennerly, S
机构
[1] Univ Virginia, Lab Opt & Quantum Elect, Charlottesville, VA 22903 USA
[2] USA, Res Lab, Adelphi, MD 20783 USA
关键词
D O I
10.1063/1.126613
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrate the operation of photovoltaic quantum-dot infrared detectors fabricated from (In, Ga)As/GaAs heterostructures. These detectors are sensitive to normal incidence light. At zero bias, we obtain a low-temperature (78 K) peak detectivity of 2x10(8) cm Hz(1/2)/W, with a responsivity of 1 mA/W at a wavelength of 13 mu m for one of the devices. The photovoltaic effect in our detectors is a result of the intrinsic inversion asymmetry of the band structure of self-formed quantum dots. A compensation voltage of 18 mV is measured. (C) 2000 American Institute of Physics. [S0003-6951(00)01222-5].
引用
收藏
页码:3301 / 3303
页数:3
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