Conduction intersubband (In,Ga)As/GaAs quantum dot infrared photodetectors

被引：23

作者：

Pan, D ^{[1
]}

Towe, E ^{[1
]}

机构：

[1] Univ Virginia, Lab Opt & Quantum Elect, Charlottesville, VA 22903 USA

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 19期

关键词：

D O I：

10.1049/el:19981278

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report a 40-period (In,Ga)As/GaAs normal-incidence quantum dot infrared photodetector operating in the wavelength range 8-14 mu m. A primary intersubband transition peak is observed at a wavelength of 12.5 mu m (E-0 --> E-1), and a secondary peak at 11.3 mu m (E-0 --> E-2). The measured intersubband energy spacing is in good agreement with calculations. The normal-incidence peak responsivity at the bias voltage of -6V is similar to 0.17 A/W. The background-limited performance temperature of our devices is found to be 62K.

引用

页码：1883 / 1884

页数：2

共 9 条

[1] Mid-infrared photoconductivity in InAs quantum dots [J].

Berryman, KW ;

Lyon, SA ;

Segev, M .

APPLIED PHYSICS LETTERS, 1997, 70 (14) :1861-1863

[2] Comparison of the electronic structure of InAs/GaAs pyramidal quantum dots with different facet orientations [J].

Kim, JN ;

Wang, LW ;

Zunger, A .

PHYSICAL REVIEW B, 1998, 57 (16) :R9408-R9411

[3] DIRECT FORMATION OF QUANTUM-SIZED DOTS FROM UNIFORM COHERENT ISLANDS OF INGAAS ON GAAS-SURFACES [J].

LEONARD, D ;

KRISHNAMURTHY, M ;

REAVES, CM ;

DENBAARS, SP ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1993, 63 (23) :3203-3205

[4] QUANTUM-WELL INFRARED PHOTODETECTORS [J].

LEVINE, BF .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (08) :R1-R81

[5] Strong normal-incidence infrared absorption and photo-current spectra from highly uniform (In,Ga)As/GaAs quantum dot structures [J].

Pan, D ;

Towe, E ;

Kennerly, S .

ELECTRONICS LETTERS, 1998, 34 (10) :1019-1020

[6] Normal incident infrared absorption from InGaAs/GaAs quantum dot superlattice [J].

Pan, D ;

Zeng, YP ;

Kong, MY ;

Wu, J ;

Zhu, YQ ;

Zhang, CH ;

Li, JM ;

Wang, CY .

ELECTRONICS LETTERS, 1996, 32 (18) :1726-1727

[7]

PAN D, 1998, IN PRESS APPL PHYS L

[8] Photoluminescence and far-infrared absorption in Si-doped self-organized InAs quantum dots [J].

Phillips, J ;

Kamath, K ;

Zhou, X ;

Chervela, N ;

Bhattacharya, P .

APPLIED PHYSICS LETTERS, 1997, 71 (15) :2079-2081

[9] Intraband absorption in n-doped InAs/GaAs quantum dots [J].

Sauvage, S ;

Boucaud, P ;

Julien, FH ;

Gerard, JM ;

ThierryMieg, V .

APPLIED PHYSICS LETTERS, 1997, 71 (19) :2785-2787

← 1 →