Tailoring mid- and long-wavelength dual response of InAs quantum-dot infrared photodetectors using InxGa1-xAs capping layers

被引：16

作者：

Kim, ET ^{[1
]}

Chen, ZH ^{[1
]}

Ho, M ^{[1
]}

Madhukar, A ^{[1
]}

机构：

[1] Univ So Calif, Dept Mat Sci & Phys, Nanostruct Mat & Devices Lab, Los Angeles, CA 90089 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2002年 / 20卷 / 03期

关键词：

D O I：

10.1116/1.1463695

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the tailoring of detection bands of InAs quantum-dot infrared photodetectors (QDIPs) using InGa1-xAs capping layers and on the realization of voltage-tunable two-color QDIPs for mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) detection. QDIPs having 2.0 ML InAs QDs capped by 20 ML In0.15Ga0.85As layer show bias-dependent photocurrent peak positions in the LWIR regime (similar to8-9mum) which are redshifted with respect to those (similar to5-7 mum) in the counterpart QDIPs without InxGa1-xAs capping layers. QDIPs having 2.5 ML InAs QDs capped by a 30 ML In0.15Ga0.85As layer have a bimodal QD size distribution and show voltage-tunable MWIR (similar to5.5-6 mum) and LWIR (similar to9-11 mum) photoresponse. At low bias, MWIR photoresponse is dominant whereas with increasing bias, the LWIR photoresponse becomes dominant. (C) 2002 American Vacuum Society.

引用

页码：1188 / 1191

页数：4

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