Temperature dependence of gain saturation in multilevel quantum dot lasers

被引：78

作者：

Park, G ^{[1
]}

Shchekin, OB ^{[1
]}

Deppe, DG ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2000年 / 36卷 / 09期

基金：

美国国家科学基金会;

关键词：

optical gain; quantum dots; semiconductor laser; temperature dependence;

D O I：

10.1109/3.863959

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The temperature dependence of quantum dot (QD) optical gain is analyzed using a multilevel model and compared with experiment. The maximum gain is found to have a surprisingly strong temperature dependence that causes level switching and can limit laser performance in QD lasers. The model based on multiple discrete levels elucidates general design criteria that should be satisfied to obtain a stable threshold versus temperature in QD lasers. Good agreement is obtained between calculations and experiment for level switching in 1.3-mu m QD lasers.

引用

页码：1065 / 1071

页数：7

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