Structural and luminescence characteristics of cycled submonolayer InAs/GaAs quantum dots with room-temperature emission at 1.3 μm

被引：39

作者：

Krishna, S ^{[1
]}

Zhu, D

Xu, J

Linder, KK

Qasaimeh, O

Bhattacharya, P

Huffaker, DL

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

[2] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 86卷 / 11期

关键词：

D O I：

10.1063/1.371664

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Quantum dots were grown by molecular beam epitaxy on GaAs substrates using a cycled submonolayer InAs/GaAs deposition technique. Their structural and luminescence characteristics have been compared with conventional self-organized dots. The room-temperature luminescence spectra are characterized by a ground state transition at 1.3 mu m and additional transitions corresponding to excited states. Cross-sectional transmission electron microscopy indicates that no dislocations are formed if the total InAs thickness is less than 5-6 monolayers. Temperature dependence of the photoluminescence indicates that both types of quantum dots may have nonradiative defects, caused by segregation and related phenomena. (C) 1999 American Institute of Physics. [S0021-8979(99)07923-2].

引用

页码：6135 / 6138

页数：4

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