Effects of spontaneous emission rates on lasing characteristics of long-wavelength (1.3 μm) GaAs-based quantum dot lasers

被引：1

作者：

Huffaker, DL ^{[1
]}

Zou, ZZ ^{[1
]}

Park, G ^{[1
]}

Shchekin, OB ^{[1
]}

Deppe, DG ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78758 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1999年 / 28卷 / 05期

基金：

美国国家科学基金会;

关键词：

1.30 mu m wavelength; InGaAs GaAs; quantum dots; semiconductor lasers;

D O I：

10.1007/s11664-999-0107-x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Data are presented characterizing the spectral emission and electroluminescence efficiency dependence on temperature of InGaAs/GaAs quantum dots that result in 1.3 mu m lasing at room temperature. Efficient ground state emission is achieved at 80K, but the spontaneous efficiency decreases with increasing temperatures. The ground state spectral width is 26 meV at 80K and 31 meV at 300K. Ground state lasing is obtained over a wide range of temperatures, with an ultralow threshold current density of 14 A/cm(2) obtained at 80K.

引用

页码：532 / 536

页数：5

共 9 条

[1] Quantum dot resonant cavity photodiode with operation near 1.3 mu m wavelength [J].