Threshold temperature dependence of lateral-cavity quantum-dot lasers

被引：20

作者：

Zou, Z ^{[1
]}

Shchekin, OB ^{[1
]}

Park, G ^{[1
]}

Huffaker, DL ^{[1
]}

Deppe, DG ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 12期

基金：

美国国家科学基金会;

关键词：

electroluminescence; epitaxial growth; quantum dots; semiconductor lasers;

D O I：

10.1109/68.730465

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The threshold temperature dependence for quantum-dot (QD) lasers with different degrees of inhomogeneous broadening are compared. By reducing the inhomogeneous linewidth, the "negative" temperature dependence due to thermal coupling of the QD ensemble can be nearly eliminated. Stable ground state lasing is obtained with a single-layer QD density of similar to 5 x 10(10) cm(-2) for a long cavity laser, while lower gain QD's and shorter cavity lengths lase on well-resolved higher energy levels.

引用

页码：1673 / 1675

页数：3

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