Selective growth of single InAs quantum dots using strain engineering

被引：23

作者：

Lee, BC ^{[1
]}

Lin, SD

Lee, CP

Lee, HM

Wu, JC

Sun, KW

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

[2] Natl Changhua Univ Educ, Dept Phys, Changhua, Taiwan

[3] Natl Don Hwa Univ, Dept Phys, Hualien, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 02期

关键词：

D O I：

10.1063/1.1433169

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A method to achieve ordering and selective positioning of single InAs self-assembled quantum dots (QDs) has been developed. The selective growth was achieved by manipulating the strain distribution on the sample surface. The QDs are formed on predesigned mesas with added strain. Single dots were obtained on small mesas. Using this technique, two-dimensional single QD arrays have been achieved. (C) 2002 American Institute of Physics.

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页码：326 / 328

页数：3

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