Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots

被引：19

作者：

Jung, SK ^{[1
]}

Hyon, CK

Park, JH

Hwang, SW

Ahn, D

Son, MH

Min, BD

Kim, Y

Kim, EK

机构：

[1] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea

[2] Univ Seoul, Inst Quantum Informat Proc & Syst, Seoul 130743, South Korea

[3] Korea Inst Sci & Technol, Semicond Mat Lab, Seoul 130650, South Korea

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 08期

关键词：

D O I：

10.1063/1.124631

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Planar-type quantum-dot devices have been fabricated and characterized. Aluminum metal electrodes with interelectrode spacing of 30 nm have been deposited on an InAs self-assembled quantum-dot wafer to form the quantum-dot devices. The current-voltage characteristics measured from the devices, in which a single quantum dot is placed in between the electrodes, exhibit negative differential resistance effects at the temperature above 77 K. They are interpreted as due to three-dimensional-zero-dimensional resonant tunneling through the InAs self-assembled quantum dot. (C) 1999 American Institute of Physics. [S0003-6951(99)03734-1].

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页码：1167 / 1169

页数：3

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