Characterization of self-assembled InAs quantum dots with InAlAs/InGaAs strain-reduced layers by photoluminescence spectroscopy

被引：17

作者：

Chang, KP ^{[1
]}

Yang, SL

Chuu, DS

Hsiao, RS

Chen, JF

Wei, L

Wang, JS

Chi, JY

机构：

[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan

[2] Ind Technol Res Inst, Hsinchu 300, Taiwan

来源：

JOURNAL OF APPLIED PHYSICS | 2005年 / 97卷 / 08期

关键词：

D O I：

10.1063/1.1886278

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optoelectronic characteristics of self-assembled InAs quantum dots (QDs) with strain-reduced layers (SRLs) were investigated using photoluminescence (PL) spectroscopy. Various SRLs that combine In0.14Al0.86As and In0.14Ga0.86As with the same total thickness were examined to ascertain their confining effect on carriers in InAs QDs. The emission wavelength is blueshifted as the thickness of InAlAs is increased. The energy separation between the ground state and the first excited state of QDs with InAlAs SRLs greatly exceeds that of QDs with InGaAs SRLs. Atomic force microscopic images and PL spectra of the QD samples demonstrated that high-quality InAs QDs with long emission wavelengths and a large energy separation can be generated by growing a low-temperature, thin InAlAs SRL onto self-assembled QDs. (C) 2005 American Institute of Physics.

引用

页数：4

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