Selective manipulation of InAs quantum dot electronic states using a lateral potential confinement layer

被引：20

作者：

Kim, ET ^{[1
]}

Chen, ZH

Madhukar, A

机构：

[1] Univ So Calif, Dept Mat Sci, Nanostruct Mat & Devices Lab, Los Angeles, CA 90089 USA

[2] Univ So Calif, Dept Phys, Nanostruct Mat & Devices Lab, Los Angeles, CA 90089 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 18期

关键词：

D O I：

10.1063/1.1517710

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To further the objective of controlled manipulation of the electronic states in epitaxial island quantum dots (QDs), we introduce the notion of a lateral potential confinement layer (LPCL) whose judicious placement during island capping allows selective impact on ground and excited electron and hole states. The energy states of InAs/In0.15Ga0.85As QDs are manipulated using 10-monolayer-thick In0.15Al0.25Ga0.60As LPCLs positioned at the bottom, upper, and top region of the QDs. The changes in the photoluminescence (PL) and PL excitation spectra reveal the nature of the electronic transitions impacted selectively through the spatial charge distributions of the states involved. (C) 2002 American Institute of Physics.

引用

页码：3473 / 3475

页数：3

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