Characterization of self-assembled InAs quantum dots with InAlAs/InGaAs strain-reduced layers by photoluminescence spectroscopy

被引：17

作者：

Chang, KP ^{[1
]}

Yang, SL

Chuu, DS

Hsiao, RS

Chen, JF

Wei, L

Wang, JS

Chi, JY

机构：

[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan

[2] Ind Technol Res Inst, Hsinchu 300, Taiwan

来源：

JOURNAL OF APPLIED PHYSICS | 2005年 / 97卷 / 08期

关键词：

D O I：

10.1063/1.1886278

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optoelectronic characteristics of self-assembled InAs quantum dots (QDs) with strain-reduced layers (SRLs) were investigated using photoluminescence (PL) spectroscopy. Various SRLs that combine In0.14Al0.86As and In0.14Ga0.86As with the same total thickness were examined to ascertain their confining effect on carriers in InAs QDs. The emission wavelength is blueshifted as the thickness of InAlAs is increased. The energy separation between the ground state and the first excited state of QDs with InAlAs SRLs greatly exceeds that of QDs with InGaAs SRLs. Atomic force microscopic images and PL spectra of the QD samples demonstrated that high-quality InAs QDs with long emission wavelengths and a large energy separation can be generated by growing a low-temperature, thin InAlAs SRL onto self-assembled QDs. (C) 2005 American Institute of Physics.

引用

页数：4

共 21 条

[11] Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser [J].

Park, G ;

Shchekin, OB ;

Csutak, S ;

Huffaker, DL ;

Deppe, DG .

APPLIED PHYSICS LETTERS, 1999, 75 (21) :3267-3269

[12] Temperature dependence of gain saturation in multilevel quantum dot lasers [J].

Park, G ;

Shchekin, OB ;

Deppe, DG .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2000, 36 (09) :1065-1071

[13] Temperature dependence of the optical properties of InAs/AlyGa1-yAs self-organized quantum dots [J].

Polimeni, A ;

Patanè, A ;

Henini, M ;

Eaves, L ;

Main, PC .

PHYSICAL REVIEW B, 1999, 59 (07) :5064-5068

[14] Coarsening of self-assembled Ge quantum dots on Si(001) [J].

Ross, FM ;

Tersoff, J ;

Tromp, RM .

PHYSICAL REVIEW LETTERS, 1998, 80 (05) :984-987

[15] Influence of GaAs capping on the optical properties of InGaAs/GaAs surface quantum dots with 1.5 μm emission [J].

Saito, H ;

Nishi, K ;

Sugou, S .

APPLIED PHYSICS LETTERS, 1998, 73 (19) :2742-2744

[16] Carrier thermal escape and retrapping in self-assembled quantum dots [J].

Sanguinetti, S ;

Henini, M ;

Alessi, MG ;

Capizzi, M ;

Frigeri, P ;

Franchi, S .

PHYSICAL REVIEW B, 1999, 60 (11) :8276-8283

[17] Discrete energy level separation and the threshold temperature dependence of quantum dot lasers [J].

Shchekin, OB ;

Park, G ;

Huffaker, DL ;

Deppe, DG .

APPLIED PHYSICS LETTERS, 2000, 77 (04) :466-468

[18]

SHEMYAKOV YM, 1999, ELECTRON LETT, V35, P898

[19] GaAs-based long-wavelength lasers [J].

Ustinov, VM ;

Zhukov, AE .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2000, 15 (08) :R41-R54

[20] Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by an InAlAs and InGaAs combination layer [J].

Zhang, ZY ;

Xu, B ;

Jin, P ;

Meng, XQ ;

Li, CM ;

Ye, XL ;

Wang, ZG .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (01) :511-514

← 1 2 3 →