Discrete energy level separation and the threshold temperature dependence of quantum dot lasers

被引：100

作者：

Shchekin, OB ^{[1
]}

Park, G ^{[1
]}

Huffaker, DL ^{[1
]}

Deppe, DG ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78759 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 04期

关键词：

D O I：

10.1063/1.127012

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented on one- and two-stack InAs quantum dot lasers that have reduced temperature sensitivity of their lasing threshold. Adjustment of dot size and composition is used to increase the energy separation between the ground and first excited radiative transition energies to 104 meV, with a dot density of similar to 3.1x10(10) cm(-2). The one- and two-stack lasers show broad area as-cleaved room temperature threshold current densities as low as 43 and 35 A/cm(2), respectively. The wide energy separation between the ground and first excited radiative transitions leads to significant improvements in the temperature sensitivity of threshold. (C) 2000 American Institute of Physics. [S0003-6951(00)00330-2].

引用

页码：466 / 468

页数：3

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