Copper inclusion and migration from the back contact in CdTe solar cells

被引：175

作者：

Corwine, CR ^{[1
]}

Pudov, AO ^{[1
]}

Gloeckler, M ^{[1
]}

Demtsu, SH ^{[1
]}

Sites, JR ^{[1
]}

机构：

[1] Colorado State Univ, Dept Phys, Ft Collins, CO 80523 USA

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2004年 / 82卷 / 04期

关键词：

CdTe solar cells; back contact; copper; stress; migration;

D O I：

10.1016/j.solmat.2004.02.005

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Metallic back contacts to CdS/CdTe solar cells will in general form Schottky barriers. Better performance is achieved with the inclusion of Cu in the back contact. This study uses current-voltage, capacitance-voltage, and laser beam induced current measurements to analyze as-deposited CdS/CdTe solar cells prepared with varying back-contact Cu amounts and to evaluate changes in cell performance following elevated-temperature stress. A simple model is proposed to explain both the observed differences in device behavior as copper is added or removed from the contact region, and how copper movement depends on electrical bias. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：481 / 489

页数：9

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