Efficient near-infrared down conversion in Zn2SiO4:Tb3+,Yb3+ thin-films

被引：42

作者：

Huang, X. Y.

Zhang, Q. Y. ^{[1
]}

机构：

[1] S China Univ Technol, MOE Key Lab Special Funct Mat, Guangzhou 510641, Guangdong, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 05期

关键词：

atomic force microscopy; doping profiles; phosphors; photoluminescence; terbium; thin films; transparency; X-ray diffraction; ytterbium; zinc compounds; ENERGY-TRANSFER; UP-CONVERSION; TB3+; DOWNCONVERSION;

D O I：

10.1063/1.3088890

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate a facile approach for the synthesis of Zn2SiO4:Tb3+,Yb3+ transparent thin films. The thin film phosphor was characterized by various methods including x-ray diffraction, atom force microscope, and photoluminescence studies. Upon excitation with a UV-blue photon in the range of 350-485 nm, an intense near-infrared (NIR) emission at around 900-1100 nm has been obtained, which is assigned to the electronic transition F-2(7/2)-> F-2(5/2) of Yb3+ upon exploring the cooperative down conversion mechanism from Tb3+ to Yb3+. The dependence of Yb3+ doping concentration on the visible- and NIR-emissions, decay lifetime, and quantum efficiencies of the thin-films has been investigated. The optimal internal NIR quantum efficiency could be as high as 154.1%.

引用

页数：4