Radiation tolerant VLSI circuits in standard deep submicron CMOS technologies for the LHC experiments: Practical design aspects

被引:278
作者
Anelli, G [1 ]
Campbell, M
Delmastro, M
Faccio, F
Florian, S
Giraldo, A
Heijne, E
Jarron, P
Kloukinas, K
Marchioro, A
Moreira, P
Snoeys, W
机构
[1] CERN, CH-1211 Geneva 23, Switzerland
[2] Univ Padua, I-35131 Padua, Italy
[3] Ist Nazl Fis Nucl, I-35131 Padua, Italy
关键词
D O I
10.1109/23.819140
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We discuss design issues related to the extensive use of Enclosed Layout Transistors (ELT's) and guard rings in deep submicron CMOS technologies in order to improve radiation tolerance of ASIC's designed for the LHC experiments (the Large Hadron Collider at present under construction at CERN). We present novel aspects related to the use of ELT's: noise measured before and after irradiation up to 100 Mrad (SiO2), a model to calculate the W/L ratio and matching properties of these devices. Some conclusions concerning the density and the speed of IC's conceived with this design approach are finally drawn.
引用
收藏
页码:1690 / 1696
页数:7
相关论文
共 16 条
[11]   MATCHING PROPERTIES OF MOS-TRANSISTORS [J].
PELGROM, MJM ;
DUINMAIJER, ACJ ;
WELBERS, APG .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1989, 24 (05) :1433-1440
[12]   Transistor matching in analog CMOS applications. [J].
Pelgrom, MJM ;
Tuinhout, HP ;
Vertregt, M .
INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, :915-918
[13]   RADIATION EFFECTS IN MOS CAPACITORS WITH VERY THIN OXIDES AT 80-DEGREES-K [J].
SAKS, NS ;
ANCONA, MG ;
MODOLO, JA .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1249-1255
[14]   GENERATION OF INTERFACE STATES BY IONIZING-RADIATION IN VERY THIN MOS OXIDES [J].
SAKS, NS ;
ANCONA, MG ;
MODOLO, JA .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1185-1190
[15]   Challenges in hardening technologies using shallow-trench isolation [J].
Shaneyfelt, MR ;
Dodd, PE ;
Draper, BL ;
Flores, RS .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1998, 45 (06) :2584-2592
[16]  
TUINHOUT HP, 1998, COURS EC POL FED LAU