Electrical transport properties of single ZnO nanorods

被引:151
作者
Heo, YW [1 ]
Tien, LC
Norton, DP
Kang, BS
Ren, F
Gila, BP
Pearton, SJ
机构
[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[2] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.1792373
中图分类号
O59 [应用物理学];
学科分类号
摘要
Single ZnO nanorods with diameters of similar to130 nm were grown on Au-coated Al2O3 substrates by catalyst-driven molecular beam epitaxy. Individual nanorods were removed from the substrate and placed between Ohmic contact pads and the current-voltage characteristics measured as a function of temperature and gas ambient. In the temperature range from 25 to 150 degreesC, the resistivity of nanorods treated in H-2 at 400 degreesC prior to measurement showed an activation energy of 0.089+/-0.02 eV and was insensitive to the ambient used (C2H4,N2O,O-2 or 10% H-2 in N-2). By sharp contrast, the conductivity of nanorods not treated in H-2 was sensitive to trace concentrations of gases in the measurement ambient even at room temperature, demonstrating their potential as gas sensors. (C) 2004 American Institute of Physics.
引用
收藏
页码:2002 / 2004
页数:3
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